FABRICATION OF GALLIUM NITRIDE SEMICONDUCTOR LAYERS BY LATERAL GROWTH FROM TRENCH SIDEWALLS

摘要

A sidewall (105) of an underlying gallium nitride layer (106) is laterally grown into a trench (107) in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer (108a). Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer.