| 摘要 |
<p>To improve the robustness of a protection against ESD, a transistor structure is proposed in which breakdown does not occur at the surface of the silicon body but in the bulk of the silicon at a distance from the surface. To this end, the drain of the transistor is partly provided in a well, on a side remote from the channel, which well is of the same conductivity type as the silicon body but has a higher doping level than said body. Due to the higher doping level, breakdown will occur in the bulk at the bend of the pn-junction. In an important embodiment, the transistor forms an output transistor of the circuit. Since a transistor is not necessary to ensure a uniform current distribution, a compact structure and possibly a lower ground bounce may be achieved.</p> |
