| 摘要 |
<p>Planarization of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly scanned over a metallized surface of a semiconductor wafer (430) without necessary physical contact with the wafer or direct electrical connection thereto. An insulating brush (550) between anode (570) and cathode (510) forces current flow through the metal layer (340).</p> |
