New photoresist polymer useful for manufacturing semiconductors in the top surface image process

摘要

A new photoresist polymer comprises a maleimide monomer, a tert-butyl 5-norbornene-2-carboxylate type monomer and a hydroxyalkyl 5-norbornene-2-carboxylate type monomer. Photoresist polymers of formula (I) are new. R1 = 0-10C substituted alkyl or benzyl; R2 = 1-10C prim., sec. or tert. alcohol; m, n = 1-3; and x, y, z = the polymerization ratios of the monomers. Independent claims are also included for: (1) A method of preparing the polymer. (2) A photoresist composition comprising: (i) the polymer; (ii) a photoacid generator; and (iii) an organic solvent. (3) A method of forming a photoresist pattern comprising: (a) preparing the photoresist composition; (b) coating the composition on a substrate provided with an etching layer; (c) exposing the photoresist layer to a light source; (d) spraying a silylation agent on the exposed layer; and (e) dry etching the silylated photoresist layer. (4) A semiconductor element using the photoresist composition.