| 摘要 |
The invention concerns a temperature sensor comprising a semiconductor material wafer (2) with a recess wherein is placed a sensitive element (3) which is heated in response to a target infrared radiation, and thermal insulating layer (16) provided between said sensitive element (3) and said wafer (2), a thermoelectric element (6) which generates a first electric signal (V1) representing the difference between the target temperature and a reference temperature, and a device sensing temperature by contact (5), transmitting a second signal (V2) representing the reference temperature. The invention is characterised in that the sensor comprises electronic means for processing the signals (V1, V2) transmitted by the thermoelectric element (6) and the device sensing temperature by contact (5), said means consisting of components formed in said semiconductor material wafer (2). |
