| 摘要 |
<p>A transfer method for exposing with high accuracy an image of a circuit pattern consisting of a gate-pattern-like linear pattern and a wide pattern at the end of the linear pattern, wherein a first reticle pattern, in which light shielding patterns (A1 to A3) having substantially the same shape as an original pattern are formed in a transmission unit (35), and a second reticle pattern, in which transmission patterns (B1 to B3) are formed periodically in a light shielding unit (32) so as to sandwich portions corresponding to patterns (A1a, A2a, A3a, A3b) which are as wide as the resolution limit of a projection optical system in light shielding patterns (A1 to A3), are formed from the original pattern of the circuit pattern to be transferred. After an image of the first reticle pattern is exposed onto a wafer via the projection optical system by using an illuminating light from a circular aperture stop, an image of the second reticle pattern is superposingly exposed onto the wafer under a deformed illumination.</p> |
