| 摘要 |
A nonvolatile semiconductor memory device for use as a flash EEPROM includes a plurality of sectors (Sector 1....Sector 16) each comprising a plurality of main memory cell regions each composed of a matrix (MX11...) of nonvolatile memory cells and at least one redundant memory cell region composed of a matrix (MXR1;MXR2) of nonvolatile memory cells. When a nonvolatile memory cell in any one of the sectors is found defective and is selected by addressing, it is replaced with one of the nonvolatile memory cells in the redundant memory cell region. Each redundant memory cell region may be associated with a group of nonvolatile memory cell sectors. <IMAGE> |
