SEMICONDUCTOR DEVICE

摘要

A semiconductor device appropriate for increased integrity in which occurrence of electrical short-circuit between a conductor for connecting a bit line and a semiconductor substrate and a gate electrode is obtained. In this semiconductor device, a first insulation layer, a second insulation layer, and a third insulation layer are formed between a first interconnection layer on the semiconductor substrate and a second interconnection layer. The etching rates of the first insulation layer and the second insulation layer are lower than the etching rate of the third insulation layer.