发明名称 Temperature controlled chuck for vacuum processing
摘要 <p>A temperature controlled chuck includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit from a wafer substrate (18), and a second cavity(50) separates the cooling unit from the heating unit. A first fluid delivery system (60) conducts fluid to the first cavity to facilitate exchanges of heat between the heating unit and the substrate. A second fluid delivery (70) system conducts fluid to the second cavity to facilitate exchanges of heat between the heating unit and the cooling unit. A control system (90) raises the temperature of the substrate by increasing power to the heating unit and by evacuating fluid from the second cavity and lowers the temperature of the substrate by reducing power to the heating unit and by conducting fluid to the second cavity. The control system may allow heating and cooling at the same time. An annular clamp (48) urges an annular plate (42) against an O-ring seal (44). The plate (42) is relatively thin to limit heat transmission.</p>
申请公布号 GB2338288(A) 申请公布日期 1999.12.15
申请号 GB19990021503 申请日期 1996.11.14
申请人 * CVC PRODUCTS, INC. 发明人 DORIAN * HEIMANSON;THOMAS R * ORMSTEAD
分类号 C23C14/50;C23C14/54;C30B23/02;C30B25/10;C30B31/12;H01L21/00;(IPC1-7):F25B29/00 主分类号 C23C14/50
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