Method for producing silicon wafers with a low defect-density

摘要

Production of silicon wafers comprises: (a) forming a silicon single crystal having an oxygen doping concentration of 4 x 10<17>/cm<3>, in which a molten material is solidified to a single crystal and cooling for 80 minutes at 850-1100 degrees C; (b) processing the single crystal to silicon wafers; and (c) tempering the wafers at≥1000 degrees C for≥1 hour.