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发明名称
CIRCUIT FOR BURN-IN STRESSING FOR SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR BURN-IN STRESSING
摘要
申请公布号
KR100234385(B1)
申请公布日期
1999.12.15
申请号
KR19960034527
申请日期
1996.08.20
申请人
SAMSUNG ELECTRONICS CO, LTD.
发明人
SON, TAE-SIK;KANG, SANG-SUK;KWAK, BYUNG-HEON
分类号
G11C11/40;(IPC1-7):G11C11/40
主分类号
G11C11/40
代理机构
代理人
主权项
地址
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