| 摘要 |
A solid-state imaging device comprises photodiodes arranged in columns on a light receiving region, and CCDs arranged in alternations with the columns of the photodiodes; wherein, when charges are stored, a potential barrier of an isolation area between CCDs formed between the photodiodes and the CCDs is formed higher with respect to signal charges than a potential barrier of an isolation area between photodiodes formed between the photodiodes. By this solid-state imaging device, signal charges generated by the incident light on this isolation area between photodiodes can appropriately be stored in the photodiodes. Therefore, it is not necessary to form a metal shielding film on the isolation area between photodiodes, and the efficient area of the photodiodes is increased by taking the area of the photodiodes at maximum. Thus, high sensitivity is obtained.
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