发明名称 |
Compound material T gate structure for devices with gate dielectrics having a high dielectric constant |
摘要 |
An integrated circuit and process for making the same is provided in which a gate electrode including a gate dielectric and a gate conductor is formed upon a semiconductor substrate. Preferably, the gate dielectric has a dielectric constant greater than the dielectric constant of silicon dioxide. In an embodiment, the gate dielectric is formed from a first compound material, and the gate conductor is formed from a second compound material different from the first compound material. Preferably, the gate dielectric is selectively etched such that a portion of the gate conductor extends beyond sidewall surfaces of the gate dielectric, forming a T-shaped gate electrode. In an embodiment, a first ion implantation is used to form lightly doped drain areas aligned with the gate dielectric sidewall surfaces using a large tilt angle implant. Source and drain implant areas are then formed self-aligned with the sidewalls of opposed sidewall spacers using a second ion implant. Alternatively, the lightly doped drain implant areas and the source/drain implant areas may be formed simultaneously using a single high-energy ion implant. A metal silicide layer may be formed across upper surfaces of the source and drain areas without the need for forming spacers adjacent the gate electrode to prevent silicide bridging.
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申请公布号 |
US6002150(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19980098719 |
申请日期 |
1998.06.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;GILMER, MARK C. |
分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L29/49;H01L29/51;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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