发明名称 Semiconductor device
摘要 PCT No. PCT/JP96/03496 Sec. 371 Date Jul. 28, 1998 Sec. 102(e) Date Jul. 28, 1998 PCT Filed Nov. 28, 1996 PCT Pub. No. WO98/24122 PCT Pub. Date Jun. 4, 1998The present invention relates a semiconductor device, and in particular, it aims at providing a semiconductor device having high reliability by making coating of a region where a gold wire has been used, which has been performed for preventing deformation and breakage of the gold wire in pressure fitting of resin, unnecessary and preventing deformation and breakage of the gold wire without increasing the fabrication cost, in a semiconductor device packaging a power device and a control device controlling this power device. In order to attain the aforementioned object, a mold gate (21) is provided on a molding die (20) employed in fabrication of the semiconductor device to be positioned on a side where a power device (PD) is arranged in a state placing a lead frame (10). While mold resin (MR) is introduced through this mold gate (21), the mold resin (MR) is injected at a fast speed until reaching a region where a gold wire (W2) is arranged and thereafter injected at a speed causing no deformation or breakage of the gold wire (W2) at this time.
申请公布号 US6002166(A) 申请公布日期 1999.12.14
申请号 US19980117171 申请日期 1998.07.28
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NODA, SUKEHISA;YAMADA, SHINJI;IWAGAMI, TOORU;IWAGAKI, SEIKI;KAWAFUJI, HISASHI
分类号 H01L21/56;H01L23/433;H01L23/495;(IPC1-7):H01L23/495 主分类号 H01L21/56
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