Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device

摘要

PCT No. PCT/JP95/01305 Sec. 371 Date Dec. 18, 1996 Sec. 102(e) Date Dec. 18, 1996 PCT Filed Jun. 30, 1995 PCT Pub. No. WO96/00758 PCT Pub. Date Jan. 11, 1996A material for forming silica-base coated insulation films used to form interlayer insulation films of multi-layer interconnection in VLSIs is provided. A material for forming a silica-base coated insulation film, obtained from (a) an alkoxysilane and/or a partially hydrolyzed product thereof, (b) a fluorine-containing alkoxysilane and/or (e) an alkylalkoxysilane, (c) an alkoxide of a metal other than Si and/or a derivative thereof and (d) an organic solvent. The material for forming silica-base coated insulation films according to the present invention has a storage stability and also enables thick-layer formation. Silica-base insulation films obtained are transparent and uniform films and are those in which no defects such as cracks or pinholes are seen, also having a superior oxygen plasma resistance.