发明名称 |
Aluminum nitride sintered body, metal embedded article, electronic functional material and electrostatic chuck |
摘要 |
In AlN crystal grains constituting a sintered body, is contained: 150 ppm-0.5 wt. %, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt. % of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 mu m and show a main peak in the wavelength range of 350-370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0x1012 OMEGA xcm.
|
申请公布号 |
US6001760(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19970824560 |
申请日期 |
1997.03.25 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
KATSUDA, YUJI;MORI, YUKIMASA;TAKAHASHI, MICHIO;BESSHO, YUKI |
分类号 |
C04B35/581;H01L21/683;(IPC1-7):C04B35/581 |
主分类号 |
C04B35/581 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|