| 摘要 |
PROBLEM TO BE SOLVED: To form a compd. film having a stable compsn. and to facilitate the compositional control in the compd. film by using stable plasma wide in a process window as for a high frequency sputter film forming method. SOLUTION: In a high frequency sputter film forming method, a part or the whole part of a wall positioned at the outside of a space formed by a wafer and a target 14 is applied with A.C. voltage or A.C. current, or high frequency electric power is pulse-oscillated to reduce the temp. of electrons in plasma, or as the gas for sputtering, at least one kind of gas among helium, neon, xenon and krypton is contained. Otherwise, a part or the whole part of the wall positioned at the outside of the space formed by the wafer and the target is applied with minus voltage. |
