发明名称 REAR GRINDING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To prevent the cracking of a semiconductor wafer by peeling an adhesive tape for protecting a surface from the surface of the semiconductor wafer by injecting hot water at a temperature within a specific range to the adhesive tape. SOLUTION: A pressure-sensitive adhesive layer 2b is formed onto one surface of a heat-shrinkable base-material film 2a, and an adhesive tape 2 for protecting a surface is stuck on the surface, to which scribing lines are formed, in the semiconductor wafer 1 through the pressure-sensitive adhesive layer 2b. When the adhesive tape 2 for protecting the surface is heated, shrunk and peeled, hot water 7 is infiltrated to the interface of the pressure-sensitive adhesive layer 2b of the adhesive tape 2 for protecting the surface and the surface of the semiconductor wafer 1 by a capillary phenomenon by injecting hot water at 60-90 deg.C to the adhesive tape 2 for protecting the surface from a nozzle 8, adhesion at the time of the peeling of the adhesive tape 2 for protecting the surface is lowered, and the adhesive tape 2 is peeled and removed.
申请公布号 JPH11345793(A) 申请公布日期 1999.12.14
申请号 JP19990078859 申请日期 1999.03.24
申请人 MITSUI CHEM INC 发明人 KUMAGAI MASATOSHI;FUJII YASUHISA;KATAOKA MAKOTO;HIRAI KENTARO;FUKUMOTO HIDEKI
分类号 B24B37/30;H01L21/304 主分类号 B24B37/30
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