发明名称 |
Method and apparatus for improving film stability of halogen-doped silicon oxide films |
摘要 |
A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF4 is employed as the fluorine source for the FSG film.
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申请公布号 |
US6001728(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19960616707 |
申请日期 |
1996.03.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BHAN, MOHAN KRISHAN;SUBRAHMANYAM, SUDHAKAR;GUPTA, ANAND;RANA, VIREN V. S. |
分类号 |
H01L21/31;C23C16/40;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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