发明名称 |
Semi-selective chemical vapor deposition |
摘要 |
The present invention is a method for semi-selectively depositing a material on a substrate by chemical vapor deposition to form continuous, void-free contact holes or vias in sub-half micron applications. An insulating layer is preferentially deposited on the field of a substrate to delay or inhibit nucleation of metal on the field. A CVD metal is then deposited onto the substrate and grows selectively in the contact hole or via where a barrier layer serves as a nucleation layer. The process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of contact holes and vias occurs without the formation of an oxide layer on a patterned substrate.
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申请公布号 |
US6001420(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19960718656 |
申请日期 |
1996.09.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MOSELY, RODERICK CRAIG;CHEN, LIANG-YUH;GUO, TED |
分类号 |
C23C16/06;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):B05D1/36;C23C16/00 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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