发明名称 |
Process for making planar redistribution structure |
摘要 |
A self-supporting redistribution structure for directly mounting a semi-conductor chip to a multilayer electronic substrate is separately fabricated and then laminated to the multilayer substrate. The redistribution structure comprises a dielectric layer having plated vias communicating between its two major surfaces, redistribution lines and input/output pads on its upper major surface and joining patterns on its lower margin surface for electrical connection with the multilayer substrate. The metal plating in the plated vias of the redistribution device connects respective input/output pads on the upper surface of the redistribution structures with the joining patterns on its lower major surface. Input/output pads define an even (planar) topography with the redistribution lines to facilitate flip chip joining. |
申请公布号 |
US6000130(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19980062816 |
申请日期 |
1998.04.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG, CHI SHIH;EGITTO, FRANK DANIEL |
分类号 |
H01L23/50;H01L23/538;H05K1/11;H05K3/46;(IPC1-7):H01K3/10 |
主分类号 |
H01L23/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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