| 摘要 |
A high frequency MOSFET device includes a Silicon-On-Insulator substrate. The MOSFET device has a source electrode connected to the substrate by a conductive region penetrating the insulator layer for dissipating heat from the drive section of an MOSFET to the substrate. The conductive region may be in a grid pattern or lattice configuration, surrounding the drive section of each MOSFET on the SOI substrate, opposite the source electrode of the MOSFET.
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