发明名称 Optical semiconductor device having a multilayer reflection structure
摘要 A multilayer mirror includes a multilayer reflection structure formed of an alternate repetition of a first epitaxial layer of a first refractive index and a second epitaxial layer of a second refractive index larger than the first refractive index, wherein the second epitaxial layer includes a group III-V mixed crystal containing N as a group V element.
申请公布号 US6002700(A) 申请公布日期 1999.12.14
申请号 US19970921151 申请日期 1997.08.29
申请人 RICOH COMPANY, LTD. 发明人 SATO, SHUNICHI
分类号 G02B1/10;H01L33/10;H01L33/32;H01L33/40;H01L33/44;H01S5/00;H01S5/183;H01S5/323;(IPC1-7):H01S3/19 主分类号 G02B1/10
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