| 摘要 |
PROBLEM TO BE SOLVED: To secure a sufficient stored capacity and to realize a high reliability even when suppressing the occurrence of steps by making the memory capacitor of a DRAM small, and suppressing the height low even if achieving the further minute configuration and high integration of a semiconductor element. SOLUTION: After a storage-node electrode 17 is uprightly provided in a storage-contact device 12, a high dielectric film such as a Ta2 O5 film 18 such as a super lattice (so-called Y-1) including PZT, SrBi2 , Ta2 O9 and SrBi2 Nb2 O9 is formed so as to cover the surface of the storage-node electrode 17. A cell- plate electrode 19 is formed so as to fill the inside of the storage contact 12 through a conductive ground film 23 covering the high dielectric film 18. A memory capacitor which performs the capacity coupling of the storage node 17 and a cell-plate electrode 19 in the storage contact 12 is completed. |
