发明名称 GAS TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To treat a large amount of gas while restraining an increase in installation cost and operating cost, an increase in harmful gas such as NOx , and deterioration of a catalyst. SOLUTION: A reactor 1 of a gas treating device is divided into plural sectional reaction parts along a reaction pass thereof. The reaction parts each are partially packed with solid catalysts 2a, 2b, 2c, 2d. Gas to be treated is divided into portions and the portions each are introduced into voids 3a, 3b, 3c, 3d of the reaction parts, and also reaction gas for gas treatment is introduced into a void 3a of the inlet at one end of the reactor 1 and the formed gas is discharged from the outlet at the other end of the reactor 1. As the reaction gas, for example, air is used, and in general, it is heated to a necessary temperature in advance. Into the voids 3b, 3c, 3d, preferably, cooling gas for keeping the inside of the reactor at a temperature causing no trouble, for example, air of room temperature is introduced. This gas treating device is used, for example, in making harmless treatment of ammonia and hydrogen containing gas discharged from an organic metal chemical vapor phase growing device used for growing GaN base semiconductors.
申请公布号 JPH11342319(A) 申请公布日期 1999.12.14
申请号 JP19980152690 申请日期 1998.06.02
申请人 SONY CORP 发明人 KAWAI HIROHARU
分类号 B01D53/86 主分类号 B01D53/86
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