| 摘要 |
A method for manufacturing SRAM polysilicon loads that utilizes a silicon dioxide layer formed between an interconnect and a load as barrier in preventing the out-diffusion of heavily doped impurities into the lightly doped or undoped polysilicon load. Hence, the effective length and the resistance of the polysilicon load can be maintained, and the dimensions of SRAM devices can be further reduced. Furthermore, the prevention of out-diffusion from a heavily doped interconnect region into a lightly doped load region serves to maintain the electrical conductivity of interconnects. Therefore, SRAM device fabrication is more easily controlled, and product reliability can be increased.
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