| 摘要 |
An oxide thin film comprising an oxide represented by ABO3, wherein A comprises at least one element selected from the group consisting of the groups IA, IIA, IIIA, IVB and VB of the periodic table, and B comprises at least one element selected from the group consisting of the groups IVA and VA of the periodic table, wherein said oxide thin film has a mixed structure in which crystal grains are dispersed in an amorphous phase or an ultrafine grain phase. The oxide thin film is prepared by preparing an organic solvent solution (1) of a metal alkoxide compound of A and a metal alkoxide compound of B; adding water, or water and a catalyst to the organic solvent solution (1) to prepare a solution (2); mixing the organic solvent solution (1) and the solution (2) to prepare a mixed solution; coating the mixed solution on a substrate to form a thin film; and subjecting the thin film to heat treatment.
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