Barrier materials for semiconductor devices

摘要

A barrier material deposited as a barrier film layer in a semiconductor device to reduce the interdiffusion of materials of varying electrical conductivity comprising adjacent layers in a semiconductor device is provided. The barrier material contains a transition metal, aluminum, silicon and nitrogen as essential ingredients. Suitable transition metals are tantalum and titanium. The material provides excellent resistance to diffusion across the range of temperatures occurring in an integrated circuit manufacturing process. The material also exhibits good adhesion to materials used in semiconductor processes.