发明名称 |
Method of blind border pattern layout for attenuated phase shifting masks |
摘要 |
A mask and method of systematically laying out the mask for test patterns in the frame cell region of an attenuating phase shifting mask are described. An array of sub-resolution contact holes are used in the border regions of the mask to prevent over exposure of photoresist in the regions between the device regions on a wafer due to side lobe effect. The mask and method provide for a buffer distance surrounding the features of the test patterns. The buffer distance is free of sub-resolution contact holes. When the buffer distance is correctly chosen problems due to side lobe effect at the frame cell portion of the mask are prevented.
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申请公布号 |
US6001512(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19980069459 |
申请日期 |
1998.04.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
TZU, SAN-DE;CHEN, YI-HSU |
分类号 |
G03F1/00;G03F7/20;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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