| 摘要 |
Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and/or p-type layer disordered regions with sufficiently abrupt transitions from disordered to ordered material. The novel devices include laterally and vertically oriented P-i-N or N-i-P photodetectors integrated with laterally oriented P-N-P or N-P-N bipolar transistors, respectively, an N-P-N or P-N-P bipolar transistor monolithically integrated with an edge emitting semiconductor laser, and laterally and vertically oriented P-i-N or N-i-P photodetectors integrated with the monolithically integrated bipolar transistor and edge emitting semiconductor laser.
|
