| 摘要 |
The plasma processing apparatus according to the present invention comprises a processing chamber in which an object to be processed is processed, a lower electrode provided at a lower portion in the processing chamber, having a mount surface where the object is mounted, and applied with a bias voltage, gas introduce tube for introducing a processing gas into the processing chamber, an upper electrode provided fixedly on a roof portion of the processing chamber and supplied with a high-frequency power, to form plasma from the processing gas in the processing chamber, and a magnetic field formation portion provided fixedly on the roof portion of the processing chamber, for forming a magnetic field in the processing chamber. The the upper electrode and the magnetic field formation portion are arranged such that a force for moving circularly electrons in the plasma is generated in the processing chamber and such that two or more circular flows of electrons which are coaxial with each other and have turning radii different from each other are generated by the force.
|
