MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting device with a superior yield. SOLUTION: A marking-off line S for division is formed from the rear surface of a semiconductor wafer 1 with an opaque substrate layer 11 for luminous wavelength at a rear-surface side to the substrate layer 11, a rear-surface electrode 17 is formed on the entire rear surface of the substrate layer 11 where the marking-off line S is formed, and a surface electrode 16 with a specific pattern is formed on the surface of a growth layer. The rear-surface electrode 17 is pressurized from above to divide it into elements.