| 摘要 |
PROBLEM TO BE SOLVED: To quickly form a connection plug of low resistance. SOLUTION: A groove 2 is formed on the surface of a ceramic substrate 1, the inside of the groove 2 is filled with baked type conductive paste thicker than the depth of the groove 2, the paste 3 is temporarily cured, the excess conductive paste 3 on the outside of the groove 2 is removed by CMP, the paste 3 is baked, and finally the backside of the substrate 1 is grounded until the paste 3 appears. A multichip semiconductor device manufacturing method capable of suppressing extension of connection plug forming time, even when the width of the groove 2 is widened in order to reduce the resistance of a connection plug by removing excess paste in a temporary curing step capable of easily removing excess paste, can be realized. |
