发明名称 |
Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers |
摘要 |
A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).
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申请公布号 |
US6001730(A) |
申请公布日期 |
1999.12.14 |
申请号 |
US19970954191 |
申请日期 |
1997.10.20 |
申请人 |
MOTOROLA, INC. |
发明人 |
FARKAS, JANOS;BAJAJ, RAJEEV;FREEMAN, MELISSA;WATTS, DAVID K.;DAS, SANJIT |
分类号 |
C09G1/02;H01L21/321;H01L21/768;(IPC1-7):H01L1/00 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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