| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency transistor which shows a proper high frequency characteristic caused by suppressing an inductance component low and of which freedom of substrate design is improved. SOLUTION: This device is constituted of a device side substrate which is constituted of a layer at least having a recess, pattern wirings 4a to 4d, 7a to 7d and 9a to 9d for gate electrodes, for drain electrodes and for source electrodes, which are provided along the surface of the device side substrate and a high frequency transistor 1, which is subjected to die bonding at the recess and is subjected to wire bonding with pattern electrodes for the gate electrodes, for the drain electrodes and for the source electrodes. The recess is set at a depth which contains the high frequency transistor 1 which is wire- bonded at a position lower than that of the device side substrate. |
