| 摘要 |
Disclosed is a MOS transistor and a fabrication process for the MOS transistor. Each gate electrode pattern made of silicon is formed on a gate oxide film formed on a silicon base body. An impurity is doped in the silicon base body using the gate electrode patterns as a mask, followed by activation of the impurity thus doped, to form diffusion layers in a surface layer of the silicon base body. An interlayer insulating film is formed in such a manner as to cover the gate electrode patterns. An upper portion of the interlayer insulating film is removed to expose the upper portion of each gate electrode pattern. The gate electrode pattern thus exposed is removed by selective etching. After that, a recessed portion formed by removal of each gate electrode pattern is embedded with a metal material, to form a CMOS transistor.
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