发明名称 Hybrid microwave-frequency integrated circuit
摘要 PCT No. PCT/RU96/00278 Sec. 371 Date May 26, 1998 Sec. 102(e) Date May 26, 1998 PCT Filed Sep. 26, 1996 PCT Pub. No. WO98/13876 PCT Pub. Date Apr. 2, 1998The microwave hybrid integrated circuit comprises a dielectric board (1) provided with a topological metallization pattern (2) on its face side, a shield grounding metallization (3) on the back side thereof, a hole (4), and a metal base (5) having a projection (6). The hole (4) in the board (1) has a constriction (9) situated at a height of 1 to 300 mu m from the face surface of the board (1). The projection (6) is located in a wide section (10) of the hole (4). Bonding pads (8) of a chip (7) which are to be grounded are electrically connected to the projection (6) through the constricted portion (9) of the hole (4) which is filled with an electrically and heat conducting material (11). The wide section (10) of the hole (4) is from 0.2x0.2 mm to the size of the chip (7), and the distance between the side walls of the projection (6) and the side walls of the wide section (10) of the hole (4) is 0.001 to 1.0 mm.
申请公布号 US6002147(A) 申请公布日期 1999.12.14
申请号 US19980077402 申请日期 1998.05.26
申请人 SAMSUNG ELECTRONICS COMPANY 发明人 IOVDALSKY, VIKTOR ANATOLIEVICH;AIZENBERG, EDUARD VOLFOVICH;BEIL, VLADIMIR ILIICH;LOPIN, MIKHAIL IVANOVICH
分类号 H01L21/3205;H01L21/60;H01L21/822;H01L23/12;H01L23/36;H01L23/52;H01L23/66;H01L25/16;H01L27/02;H01L27/04;(IPC1-7):H01L29/80;H01L31/112;H01L29/861;H01L23/34 主分类号 H01L21/3205
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