| 摘要 |
PROBLEM TO BE SOLVED: To reduce the connecting resistance between a silicon layer and a wiring layer with the function of a ferroelectric layer being maintained. SOLUTION: A metal layer 30 comprises nickel, metal which is made silicide not at a temperature greater than that which a ferroelectric layer FL irreversively loses the ferroelectric property. The metallic layer 30 is formed, in such a way that it is partially brought into one surface of a source/drain region 26. Then, the metal layer is made silicide, and a silicide layer 31 is formed by heating at a temperature greater than that which a ferroelectric layer FL irreversively loses the ferroelectric property. Accordingly, the part brought into the upper surface a N<+> diffused layer 26 among the metal layer 30 can be adequately made silicide without degrading the function of the ferroelectric layer FL. Moreover, nickel has a low catalyst with respect to the ferroelectric layer FL. Therefore, the metal layer which is not made silicide is unable to adversely affect the ferroelectric layer FL. |
