SURFACE WAVE PLASMA ETCHING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a surface wave plasma etching apparatus. SOLUTION: An etching apparatus includes an upper region 100 for irradiating microwaves and a lower region for promoting etching. The upper region has a microwave restraining plate 116 interposed between upper and lower glass plates 110 and 114. As a result of the microwave restraining plate 116 interposed between the upper and lower glass plates 110 and 114, the problem of polluted particles generated from the microwave restraining plate 116 sputtered by the plasma can be prevented.