| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device without increasing a manufacturing process and degrading hot carrier resistance, and its manufacturing method. SOLUTION: An element region S is demarcated at a region on the surface of a P-type silicon substrate 1 by an element isolation insulation film 2 consisting of a silicon oxide film, and a gate oxide film 3 consisting of a silicon oxide film that is 8 nm thick is formed on the surface of the P-type silicon substrate 1 of the element region S. A gate electrode 4 of a memory cell transistor is formed at the region on the surface of the gate oxide film 3 of the memory cell region, and a peripheral gate electrode 10 is formed at the region on the surface of the gate oxide film 3 of a peripheral circuit region. A first silicon nitride film 31 is formed on the surface of the cell gate electrode 4 and the peripheral gate electrode 10, and a cell gate side surface silicon oxide film 6 is formed on the side surface of the cell gate electrode 4. A peripheral gate side surface silicon nitride film 12 is formed on the side surface of the peripheral gate electrode 10. |
