| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly inductive memory which has excellent retaining characteristic and fatigue resistance even after miniaturization and is advantageous in achieving higher integration, higher speed and lower operation voltage. SOLUTION: This memory comprises a thin film capacitor having a first electrode 2, a dielectric thin film 3 with a perovskite crystal structure and a second electrode 4. In this case, the dielectric thin film 3 satisfies the relationship of 0.02<=(Cf -Cb )/Cb , 250 deg.<=(Tf -Tc ) and N<=34 where Cf [nm] is the lattice constant of the dielectric thin film in the thickness direction thereof, Cb [nm] is the lattice constant of a bulk dielectric, Tf [K] is the Curie temperature of the dielectric thin film, Tc [K] is the Curie temperature of the bulk dielectric and N is the number of unit crystal lattices of the dielectric thin film in the thickness direction thereof. |
