发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a positive type photoresist compsn. having high sensitivity, high resolution, improved focal depth-width characteristics and improved under- exposure latitude by incorporating an alkali-soluble resin and a photosensitive component contg. a specified quinonediazido ester and other specified quinonediazido ester. SOLUTION: The photoresist compsn. contains an alkali-soluble resin (A) and a photosensitive component (B) contg. a quinonediazido ester (B-1) of at least one of compds. represented by formulae I and II and a quinonediazido ester (B-2) of at least one of compds. represented by formulae III and IV. In formulae I and II, R<1> -R<17> are each H or 1-3C alkyl. and R<18> is 1-3C alkyl or cycloalkyl. In formulae III and IV, R<19> and R<20> are each 1-5C alkyl and (n) is 0 or 1-8.
申请公布号 JPH11338137(A) 申请公布日期 1999.12.10
申请号 JP19980149968 申请日期 1998.05.29
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SUZUKI TAKAKO;DOI KOSUKE;OBARA HIDEKATSU;NAKAYAMA TOSHIMASA
分类号 G03F7/022;G03F7/20;H01L21/027;(IPC1-7):G03F7/022 主分类号 G03F7/022
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