| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element using a gallium nitride-based compound semiconductor formed in an electrode structure, having a good ohmic contact characteristic and a superior wire-bondability. SOLUTION: A laminated semiconductor section 10, which contains an n-type layer 3 and a p-type layer 5 both composed of gallium nitride-based compound semiconductors and forms a light-emitting region is provided on the surface of a substrate 1 and a p-side electrode 8 is formed on the surface of the section 10 with a diffused metal layer 7 in between. In addition, an n-side electrode 9 is formed on the part of the n-type layer 3 exposed by removing part of the laminated semiconductor section 10. The n-side electrode 9 consists of an electrode section 91 for ohmic contact and another electrode section 92 for bonding, and the electrode section 92 is provided to cover the top and side faces of the electrode section 91. |
