| 摘要 |
PROBLEM TO BE SOLVED: To emit light at a high luminance with few short-circuits by providing a protective film covering the surface of nitride semiconductor layers with a laminate, comprising a first layer made of an insulating film, a metal layer formed on the first layer, and a second layer made of an insulating film and formed on the metal layer. SOLUTION: After forming an n-type nitride semiconductor film and a film of a p-type nitride semiconductor on a sapphire substrate 104, the p-type nitride semiconductor is etched in part to thereby expose the surface of the n-type nitride semiconductor layer. After forming electrodes 110, 111 and 112 on the p and n-type nitride semiconductors, a silicon oxide film is formed over the whole surface. Etching is effected, using the silicon oxide film as a mask to thereby expose part of the electrode surfaces, and an insulating film which is a first layer 101 is formed. Then, a platinum film is formed to thereby form a metal layer 102 on the layer 101. Furthermore, a second layer 103 of an insulating layer is formed on the layer 102 by processing the silicon oxide film by a plasma CVD method. As a result, a three-layered protective film is formed. |
