| 摘要 |
PROBLEM TO BE SOLVED: To improve the embedding characteristic of an insulating film with respect to a recessed part having a high aspect ratio. SOLUTION: A CF film is formed on a wafer 10 with a wiring pattern through plasma using a C6 F6 gas, for example, as a film forming gas. The CF film is etched partly through plasma, using an O2 gas and an Ar gas. In this case, the CF film is etched partly in such a way that the front area of a recessed part 34 between wirings 32 and 33 is widened, and thereby the CF film tends to be deposited at the bottom of the recessed part 34. Therefore, when a film formation step and an etching step are repeated alternately, the bottom of the recessed part 34 becomes shallow as the CF film is deposited gradually, and the CF film is embedded in the recessed part 34. In this way, the CF film can be embedded without voids to a recessed part having a high aspect ratio. |
