| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile ferroelectric memory device and a method of manufacturing thereof, in which cell plate lines are dispensed with and thereby manufacturing process is simplified with the efficient layout by connecting the gate of a transistor to a split word line while a capacitor is connected to other split word line. SOLUTION: A metallic layer for bit lines is formed on a whole surface including contact holes. A first and a second bit line, 104a and 104b, are formed normal to a first and a second split word line, 93a and 93b, by selective patterning. In each block, a first and a second transistor, T1 and T2, are positioned inversely with respect to upper and lower directions. A capacitor is formed on block A and block B that are placed on split word lines, 93a and 93b, respectively, wherein the first transistor T1 is connected to block A and the second transistor T2 is connected to block B. Namely, the circuit is composed of laterally positioned block A and block B. |
