| 摘要 |
PROBLEM TO BE SOLVED: To reduce the threshold current density of a short wavelength semiconductor laser by constituting the thickness of an active layer with the single gain layer to be larger than a specified thickness, and an optical guide layer installed between the active layer and a clad layer. SOLUTION: A clad layer 2 is formed on a substrate 1. An active layer 4 is formed of a single gain layer, whose thickness is not less than 3 nm on the clad layer 2 through an optical guide layer 3. Namely, a single-well layer is formed when quantum well structure is formed, and the single active layer is formed, when structure is not formed. Consequently, the scattering of impurities is reduced and the mobility of holes is improved by setting the active layer 4 to be an undoped layer. A clad layer 6 is stacked and formed on the active layer 4 through a light guide layer 5. Thus, the threshold current density of a short wavelength semiconductor laser can be reduced. |
