| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being improved in high-frequency characteristic by reducing the parasitic resistance generated in the lower electrode of a capacitive element. SOLUTION: In a semiconductor device 20 comprising a first insulating film 2 formed on a substrate 1, a second conductor 5 formed on the film 2 via a first conductor 3, a second insulating film 11, a first wiring 8 which is connected to the first conductor 3 via first contact holes 6, and a second wiring connected to the second conductor 5 via second contact holes 7, opening regions 10 are formed in the second conductor 5 by partially removing the conductor 5. The first contact holes 6 are formed via the second insulating film 11 in the opening regions 10, and the first conductor 3 is electrically connected to the first wiring 8 via the holes 6. |
