| 摘要 |
PROBLEM TO BE SOLVED: To start and steadily continue plasma discharge during repeated steps, in which an adhesive film is deposited in a plasma chamber, and remove a residue of organic protective film on a wafer with good reproducibiliy. SOLUTION: A wafer(w) has an organic protective film 21 such as a polyimide film for covering an arranged face of solder balls in an LSI chip. When a residue of the organic protective film 21 is removed in a sputter etching method, an organic attached film 21a with poor insulation is generated from the organic protective film 21 and deposited on an inner wall face in the plasma chamber(PC), and thereby impedance in the plasma chamber(PC) is changed. Therefore, a dummy wafer(DW1) with an inorganic insulating film 22 is subjected to sputter etching, and the organic attached film 21a is covered by the inorganic attached film 22a with good insulation, or a plasma cleaning step with enzyme-based chemical species is regularly carried out to remove the attached film. |
