| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ferroelectric film of excellent imprint characteristics by impregnating OH groups into the ferroelectric film beforehand to burn residual carbon during main firing also by OH groups, by orientating the ferroelectric film having crystal grain size of more than a specified value to be capable of switching with electric field, and by increasing crystal grain size to more than the specified value. SOLUTION: An interlayer isolation film 2 is formed on a silicon substrate 1 having CMOS FETs. IrO2 layer 3a and Pt layer 3b deposited thereon form a bottom electrode 3 of a capacitor, which is coated with a sol-gel film. Pre- fining is applied at 350 deg.C for 5 minutes, and repetition of the painting and the pre-firing for four times forms amorphous layer of La-doped lead titanate zirconate. Grains of more than 85% are oriented to be capable of switching with electric field in a thickness direction. The ferroelectric film is crystallized by absorbing water so that grain size of more than 20 nm are contained in the crystal grains. By lamp annealing, the ferroelectric film impregnating OH groups is crystallized to form PLZT film. Finally, a top electrode layer 5 of the capacitor is formed on PLZT film 4. |
